IRF1405ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn-Off Delay Time :

48 ns

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

55V

Height :

9.017mm

Current Rating :

75A

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Mount :

Through Hole

Case Connection :

DRAIN

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 75A, 10V

Length :

10.668mm

Pulsed Drain Current-Max (IDM) :

600A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Continuous Drain Current (ID) :

75A

Resistance :

4.9Ohm

Number of Terminations :

3

Turn On Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4780pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Rise Time :

110ns

Series :

HEXFET®

Transistor Element Material :

SILICON

Width :

4.826mm

Power Dissipation :

230W

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

420 mJ

Published :

2004

Nominal Vgs :

4 V

Vgs (Max) :

±20V

Lead Free :

Contains Lead, Lead Free

Number of Pins :

3

FET Type :

N-Channel

Power Dissipation-Max :

230W Tc

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Dual Supply Voltage :

55V

Fall Time (Typ) :

82 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V