IRF1405ZLPBF
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- Mfr.Part #
- IRF1405ZLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO262
- Stock
- 134,297
- In Stock ：
- 134,297
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Height :
- 9.65mm
- Power Dissipation :
- 230W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current Rating :
- 75A
- Number of Elements :
- 1
- Resistance :
- 4.9mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4780pF @ 25V
- Continuous Drain Current (ID) :
- 75A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Published :
- 2010
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 55V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins :
- 3
- Voltage - Rated DC :
- 55V
- Fall Time (Typ) :
- 82 ns
- Power Dissipation-Max :
- 230W Tc
- Turn On Delay Time :
- 18 ns
- Mount :
- Through Hole
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 75A, 10V
- Turn-Off Delay Time :
- 48 ns
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Length :
- 10.668mm
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.826mm
- Rise Time :
- 110ns
- Datasheets
- IRF1405ZLPBF
N-Channel Tube 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1405ZLPBF Overview
A device's maximal input capacitance is 4780pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 48 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRF1405ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
IRF1405ZLPBF Applications
There are a lot of Infineon Technologies
IRF1405ZLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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