IRF1405S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

200W Tc

Avalanche Energy Rating (Eas) :

590 mJ

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

225

Drain-source On Resistance-Max :

0.0053Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Type :

N-Channel

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

680A

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 101A, 10V

DS Breakdown Voltage-Min :

55V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2004

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

131A Tc

HTS Code :

8541.29.00.95

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE