IRF1405PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

5.3mOhm

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Case Connection :

DRAIN

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Recovery Time :

130 ns

Height :

19.8mm

Gate to Source Voltage (Vgs) :

20V

Lead Pitch :

2.54mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Continuous Drain Current (ID) :

169A

Rise Time :

190ns

Width :

4.826mm

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Number of Channels :

1

Number of Pins :

3

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

680A

Number of Elements :

1

Turn-Off Delay Time :

130 ns

Drain to Source Breakdown Voltage :

55V

Drain Current-Max (Abs) (ID) :

75A

Current Rating :

169A

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 101A, 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Dual Supply Voltage :

55V

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

169A Tc

Threshold Voltage :

4V

Termination :

Through Hole

Power Dissipation-Max :

330W Tc

Number of Terminations :

3

Fall Time (Typ) :

110 ns

Avalanche Energy Rating (Eas) :

560 mJ

Packaging :

Tube

Power Dissipation :

330W

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Length :

10.668mm

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE