IRF1405LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Through Hole

Packaging :

Tube

Drain to Source Breakdown Voltage :

55V

Published :

2010

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Fall Time (Typ) :

110 ns

Turn-Off Delay Time :

130 ns

Power Dissipation :

200W

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

131A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Turn On Delay Time :

13 ns

RoHS Status :

RoHS Compliant

Height :

9.65mm

Supplier Device Package :

TO-262

Input Capacitance :

5.48nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

131A

Max Operating Temperature :

175°C

Rds On Max :

5.3 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

190ns

Rds On (Max) @ Id, Vgs :

5.3mOhm @ 101A, 10V

Width :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

5.3mOhm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Continuous Drain Current (ID) :

131A

Number of Elements :

1

Voltage - Rated DC :

55V

Length :

10.668mm

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Vgs (Max) :

±20V

Number of Pins :

3

Power Dissipation-Max :

200W Tc