IRF1404ZSTRRPBF
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- Mfr.Part #
- IRF1404ZSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 180A D2PAK
- Stock
- 7,086
- In Stock ：
- 7,086
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Width :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- RoHS Status :
- RoHS Compliant
- Rds On Max :
- 3.7 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 36 ns
- Fall Time (Typ) :
- 58 ns
- Supplier Device Package :
- D2PAK
- Height :
- 4.826mm
- Power Dissipation-Max :
- 200W Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 190A
- Drain to Source Breakdown Voltage :
- 40V
- Turn On Delay Time :
- 18 ns
- Length :
- 10.668mm
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 3.7mOhm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.7mOhm @ 75A, 10V
- Input Capacitance :
- 4.34nF
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 200W
- Max Operating Temperature :
- 175°C
- Published :
- 2012
- Number of Pins :
- 3
- Rise Time :
- 110ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Datasheets
- IRF1404ZSTRRPBF
N-Channel Tape & Reel (TR) 3.7mOhm @ 75A, 10V ±20V 4340pF @ 25V 150nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1404ZSTRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 190A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.This device has a drain-to-source resistance of 3.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF1404ZSTRRPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 3.7mOhm
a 40V drain to source voltage (Vdss)
IRF1404ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1404ZSTRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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