IRF1404ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

3.7mOhm

Fall Time (Typ) :

58 ns

Number of Elements :

1

Turn On Delay Time :

18 ns

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Length :

10.668mm

Transistor Application :

SWITCHING

Number of Terminations :

2

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 75A, 10V

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

190A

Power Dissipation-Max :

200W Tc

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

110ns

Radiation Hardening :

No

Voltage - Rated DC :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

36 ns

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Mounting Type :

Surface Mount

Recovery Time :

42 ns

Lead Free :

Contains Lead

Nominal Vgs :

4 V

Vgs (Max) :

±20V

Number of Pins :

3

Power Dissipation :

200W

Height :

4.826mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Current Rating :

75A

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 150μA

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Threshold Voltage :

4V

JESD-30 Code :

R-PSSO-G2

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant