IRF1404ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0037Ohm

Terminal Position :

Single

Published :

2011

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 75A, 10V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

40V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Avalanche Energy Rating (Eas) :

330 mJ

FET Type :

N-Channel

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

220W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

75A

Surface Mount :

yes

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

710A