IRF1404ZSPBF
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- Mfr.Part #
- IRF1404ZSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 180A D2PAK
- Stock
- 10,880
- In Stock ：
- 10,880
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 75A, 10V
- ECCN Code :
- EAR99
- Published :
- 2003
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 200W Tc
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 52 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 25V
- Drain to Source Voltage (Vdss) :
- 40V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- IRF1404ZSPBF
N-Channel Tube 3.7m Ω @ 75A, 10V ±20V 4340pF @ 25V 150nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1404ZSPBF Description
The IRF1404ZSPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRF1404ZSPBF an extremely efficient and reliable device for various applications.
IRF1404ZSPBF Features
-
Advanced Process Technology
-
Ultra-Low On-Resistance
-
175°C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
-
Lead-Free
IRF1404ZSPBF Applications
-
Mechanical testing
-
Vibration analysis
-
Ultrasonic inspection
-
Induction furnaces
-
Arc furnaces and arc welders
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