IRF1404ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

36 ns

Dual Supply Voltage :

40V

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-220AB

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

180A Tc

JESD-609 Code :

e3

Threshold Voltage :

4V

Turn On Delay Time :

18 ns

Fall Time (Typ) :

58 ns

Continuous Drain Current (ID) :

190A

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Power Dissipation :

220W

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Number of Terminations :

3

Rise Time :

110ns

Recovery Time :

42 ns

Transistor Application :

SWITCHING

Number of Pins :

3

FET Type :

N-Channel

Mount :

Through Hole

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 75A, 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

750A

Height :

8.77mm

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Resistance :

3.7Ohm

Avalanche Energy Rating (Eas) :

480 mJ

ECCN Code :

EAR99

Power Dissipation-Max :

200W Tc

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.54mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Packaging :

Tube

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Voltage - Rated DC :

40V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

75A

Series :

HEXFET®