IRF1404ZGPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Turn-Off Delay Time :

36 ns

Max Operating Temperature :

175°C

Number of Pins :

3

Published :

2010

Fall Time (Typ) :

58 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

110ns

Length :

10.668mm

Rds On Max :

3.7 mΩ

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.7mOhm @ 75A, 10V

Continuous Drain Current (ID) :

75A

Mounting Type :

Through Hole

Input Capacitance :

4.34nF

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Turn On Delay Time :

18 ns

Power Dissipation-Max :

220W Tc

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Power Dissipation :

220W

Mount :

Through Hole

FET Type :

N-Channel

Height :

16.51mm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

3.7mOhm

Series :

HEXFET®

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Radiation Hardening :

No

Supplier Device Package :

TO-220AB

Width :

4.826mm