IRF1404STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.826mm

Case Connection :

DRAIN

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Resistance :

4mOhm

Transistor Element Material :

SILICON

Number of Pins :

3

Series :

HEXFET®

Power Dissipation :

3.8W

Fall Time (Typ) :

26 ns

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

650A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current Rating :

162A

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

75A

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

162A

Published :

2001

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Number of Elements :

1

Element Configuration :

Single

Power Dissipation-Max :

3.8W Ta 200W Tc

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

162A Tc

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

40V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Number of Terminations :

2

JESD-609 Code :

e3

Turn-Off Delay Time :

72 ns

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Lead Free :

Lead Free

Rise Time :

140ns

Length :

10.668mm

Width :

9.65mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE