IRF1404SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Dual Supply Voltage :

40V

Fall Time (Typ) :

26 ns

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Turn On Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

75A

Contact Plating :

Tin

Lead Free :

Lead Free

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

162A Tc

REACH SVHC :

No SVHC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Width :

9.65mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

2001

Drain to Source Breakdown Voltage :

40V

Voltage - Rated DC :

40V

Recovery Time :

110 ns

Resistance :

4mOhm

Mount :

Surface Mount

Current Rating :

162A

Terminal Form :

Gull wing

Packaging :

Tube

Power Dissipation :

200W

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.8W Ta 200W Tc

Turn-Off Delay Time :

72 ns

Vgs (Max) :

±20V

Rise Time :

140ns

Continuous Drain Current (ID) :

162A

Pulsed Drain Current-Max (IDM) :

650A

Radiation Hardening :

No

Series :

HEXFET®

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Height :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount