IRF1404PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Factory Lead Time :

12 Weeks

Lead Pitch :

2.54mm

Number of Terminations :

3

Current Rating :

162A

Rise Time :

190ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

808A

Input Capacitance (Ciss) (Max) @ Vds :

5669pF @ 25V

Length :

10.668mm

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Vgs (Max) :

±20V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Contact Plating :

Tin

Turn On Delay Time :

17 ns

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

75A

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Height :

19.8mm

Threshold Voltage :

4V

Dual Supply Voltage :

40V

Radiation Hardening :

No

Power Dissipation-Max :

333W Tc

Resistance :

4mOhm

Power Dissipation :

333W

Max Junction Temperature (Tj) :

175°C

Nominal Vgs :

4 V

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

620 mJ

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4m Ω @ 121A, 10V

Published :

2003

Voltage - Rated DC :

40V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

202A Tc

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

202A

Width :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Recovery Time :

117 ns

Fall Time (Typ) :

33 ns

Transistor Application :

SWITCHING

Termination :

Through Hole

Packaging :

Tube

Turn-Off Delay Time :

46 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA