IRF135B203
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- Mfr.Part #
- IRF135B203
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 135V 129A TO220-3
- Stock
- 15,247
- In Stock ：
- 15,247
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 441W Tc
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 77A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9700pF @ 50V
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 129A Tc
- Drain to Source Voltage (Vdss) :
- 135V
- Published :
- 2013
- Series :
- StrongIRFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Continuous Drain Current (ID) :
- 129A
- Datasheets
- IRF135B203
N-Channel Tube 8.4m Ω @ 77A, 10V ±20V 9700pF @ 50V 270nC @ 10V 135V TO-220-3
IRF135B203 transistors, N-Channel FET Type, drain to Source Voltage (Vdss) is 135V, continuous Drain Current (ID) is 129A, through Hole, maximum power dissipation is 441W Tc, drive Voltage (Max Rds On,Min Rds On) is 10V.
IRF135B203 Features
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free
● RoHS Compliant
● Halogen-Free
IRF135B203 Applications
● Brushed Motor drive applications
● BLDC Motor drive applications
● Battery powered circuits
● Half-bridge and full-bridge topologies
● Synchronous rectifier applications
● Resonant mode power supplies
● OR-ing and redundant power switches
● DC/DC and AC/DC converters
● DC/AC Inverters
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