IRF133

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Drain to Source Voltage (Vdss) :

80 V

FET Type :

N-Channel

FET Feature :

-

Vgs (Max) :

±20V

Operating Temperature :

-55°C ~ 175°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Supplier Device Package :

TO-3

Package / Case :

TO-204AA, TO-3

Rds On (Max) @ Id, Vgs :

230mOhm @ 8.3A, 10V

Power Dissipation (Max) :

79W (Tc)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Bulk

Series :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)