IRF1324STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Width :

9.65mm

Length :

10.668mm

Power Dissipation-Max :

300W Tc

Height :

4.826mm

FET Type :

N-Channel

Rds On Max :

1.65 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

17 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Continuous Drain Current (ID) :

195A

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

175°C

Power Dissipation :

300W

Mount :

Surface Mount

Rise Time :

190ns

Mounting Type :

Surface Mount

Published :

2009

Rds On (Max) @ Id, Vgs :

1.65mOhm @ 195A, 10V

Drain to Source Voltage (Vdss) :

24V

Min Operating Temperature :

-55°C

Number of Pins :

3

Turn-Off Delay Time :

83 ns

Supplier Device Package :

D2PAK

Drain to Source Breakdown Voltage :

24V

Vgs (Max) :

±20V

Fall Time (Typ) :

120 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

7.59nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V