IRF1324STRL-7PP
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- Mfr.Part #
- IRF1324STRL-7PP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 240A D2PAK
- Stock
- 9,819
- In Stock ：
- 9,819
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 230 mJ
- Power Dissipation :
- 300W
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 240A
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Published :
- 2010
- Rds On (Max) @ Id, Vgs :
- 1m Ω @ 160A, 10V
- Terminal Position :
- Single
- Rise Time :
- 240ns
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 86 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 252nC @ 10V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7700pF @ 19V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G6
- Drain to Source Breakdown Voltage :
- 24V
- Number of Pins :
- 7
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- HEXFET®
- Terminal Form :
- Gull wing
- Nominal Vgs :
- 4 V
- Power Dissipation-Max :
- 300W Tc
- Turn On Delay Time :
- 19 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 93 ns
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IRF1324STRL-7PP
N-Channel Tape & Reel (TR) 1m Ω @ 160A, 10V ±20V 7700pF @ 19V 252nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRF1324STRL-7PP Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 230 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7700pF @ 19V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 24V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 24V.As a result of its turn-off delay time, which is 86 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1324STRL-7PP Features
the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 240A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 86 ns
IRF1324STRL-7PP Applications
There are a lot of Infineon Technologies
IRF1324STRL-7PP applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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