IRF1324SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Length :

10.668mm

Threshold Voltage :

4V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

24V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

1.65mOhm

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Packaging :

Tube

Vgs (Max) :

±20V

Fall Time (Typ) :

120 ns

REACH SVHC :

No SVHC

Rise Time :

190ns

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

340A

Rds On (Max) @ Id, Vgs :

1.65mOhm @ 195A, 10V

Width :

9.65mm

Drain to Source Breakdown Voltage :

24V

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Published :

2008

Power Dissipation-Max :

300W Tc

Termination :

SMD/SMT

Number of Elements :

1

Radiation Hardening :

No

Turn-Off Delay Time :

83 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

D2PAK

Input Capacitance :

7.59nF

Mount :

Surface Mount

Height :

4.826mm

Min Operating Temperature :

-55°C

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Nominal Vgs :

4 V

Rds On Max :

1.65 mΩ

Drain to Source Voltage (Vdss) :

24V

Power Dissipation :

300W