IRF1324PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Rise Time :

190ns

Continuous Drain Current (ID) :

340A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Width :

4.826mm

Termination :

Through Hole

Turn On Delay Time :

17 ns

ECCN Code :

EAR99

Power Dissipation :

300W

Published :

2008

Dual Supply Voltage :

24V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

83 ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Length :

10.668mm

Lead Free :

Lead Free

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Element Configuration :

Single

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

270 mJ

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Transistor Element Material :

SILICON

Radiation Hardening :

No

Height :

9.02mm

Series :

HEXFET®

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Vgs (Max) :

±20V

Number of Terminations :

3

Fall Time (Typ) :

120 ns

Package / Case :

TO-220-3

Number of Elements :

1

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

24V

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 195A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole