IRF1324LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

340A

Vgs (Max) :

±20V

Width :

4.826mm

Rds On Max :

1.65 mΩ

Rise Time :

190ns

Rds On (Max) @ Id, Vgs :

1.65mOhm @ 195A, 10V

Fall Time (Typ) :

120 ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Mounting Type :

Through Hole

Height :

9.65mm

Drain to Source Resistance :

1.65mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

83 ns

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Max Operating Temperature :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Turn On Delay Time :

17 ns

Length :

10.668mm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation :

300W

Supplier Device Package :

TO-262

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Series :

HEXFET®

Drain to Source Breakdown Voltage :

24V

Input Capacitance :

7.59nF

Packaging :

Tube

Published :

2009

Number of Pins :

3

Nominal Vgs :

4 V

Power Dissipation-Max :

300W Tc

Drain to Source Voltage (Vdss) :

24V