IRF1312PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Vgs (Max) :

±20V

Rise Time :

51ns

Drain to Source Voltage (Vdss) :

80V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

5.5 V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

47 ns

Packaging :

Tube

Power Dissipation-Max :

3.8W Ta 210W Tc

Threshold Voltage :

5.5V

Element Configuration :

Single

Radiation Hardening :

No

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Number of Pins :

3

Package / Case :

TO-220-3

Max Operating Temperature :

175°C

Voltage - Rated DC :

80V

RoHS Status :

RoHS Compliant

Mount :

Through Hole

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

10mOhm @ 57A, 10V

Power Dissipation :

210W

Continuous Drain Current (ID) :

95A

Drain to Source Breakdown Voltage :

80V

Fall Time (Typ) :

51 ns

Dual Supply Voltage :

80V

Published :

2004

Input Capacitance :

5.45nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

10 MΩ

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

5450pF @ 25V

Current Rating :

95A

Number of Elements :

1

Resistance :

10Ohm