IRF1310NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Continuous Drain Current (ID) :

42A

Height :

4.826mm

Power Dissipation :

3.8W

Number of Elements :

1

Avalanche Energy Rating (Eas) :

420 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Turn-Off Delay Time :

45 ns

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Rise Time :

56ns

Length :

10.668mm

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

36m Ω @ 22A, 10V

Width :

9.65mm

Turn On Delay Time :

11 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation-Max :

3.8W Ta 160W Tc

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

40 ns

Number of Terminations :

2

Element Configuration :

Single

Number of Pins :

3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier