IRF1310NPBF

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Mfr.Part #
IRF1310NPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 42A TO220AB
Stock
7,544
In Stock :
7,544

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Contact Plating :
Tin
Series :
HEXFET®
Published :
1998
Power Dissipation :
160W
Rise Time :
56ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Operating Temperature :
-55°C~175°C TJ
Length :
10.5156mm
Number of Elements :
1
Dual Supply Voltage :
100V
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
REACH SVHC :
No SVHC
Height :
19.8mm
JEDEC-95 Code :
TO-220AB
Nominal Vgs :
4 V
Turn On Delay Time :
11 ns
Vgs (Max) :
±20V
Width :
4.69mm
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
100V
Threshold Voltage :
2V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Voltage - Rated DC :
100V
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Number of Channels :
1
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
36m Ω @ 22A, 10V
Recovery Time :
270 ns
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
Current Rating :
42A
Turn-Off Delay Time :
45 ns
Fall Time (Typ) :
40 ns
Factory Lead Time :
12 Weeks
Element Configuration :
Single
ECCN Code :
EAR99
Power Dissipation-Max :
160W Tc
Lead Pitch :
2.54mm
Radiation Hardening :
No
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Avalanche Energy Rating (Eas) :
420 mJ
Lead Free :
Contains Lead, Lead Free
Gate to Source Voltage (Vgs) :
20V
Max Junction Temperature (Tj) :
175°C
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
42A
Datasheets
IRF1310NPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1310NPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Number of Channels:1, Package / Case:TO-220-3, IRF1310NPBF pinout, IRF1310NPBF datasheet PDF, IRF1310NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1310NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1310NPBF


N-Channel Tube 36m Ω @ 22A, 10V ±20V 1900pF @ 25V 110nC @ 10V TO-220-3

IRF1310NPBF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 420 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF1310NPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2V


IRF1310NPBF Applications


There are a lot of Infineon Technologies
IRF1310NPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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