IRF1104LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

175°C

Surface Mount :

No

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.009Ohm

Qualification Status :

Not Qualified

Number of Terminals :

3

Power Dissipation-Max (Abs) :

170W

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

100A

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

[object Object]

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

400A

Avalanche Energy Rating (Eas) :

350 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-262AA

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

THROUGH-HOLE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE