IRF1104L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Surface Mount :

No

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

350 mJ

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

225

Series :

HEXFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.009Ohm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Terminations :

3

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

9m Ω @ 60A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max :

2.4W Ta 170W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Drain Current-Max (Abs) (ID) :

100A