IRF1018ESTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

110W

Continuous Drain Current (ID) :

79A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Fall Time (Typ) :

46 ns

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Rise Time :

35ns

Drain to Source Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

88 mJ

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Height :

4.826mm

Number of Terminations :

2

Lead Free :

Lead Free

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Length :

10.668mm

Power Dissipation-Max :

110W Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Turn-Off Delay Time :

55 ns

Published :

2008

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Number of Elements :

1

Turn On Delay Time :

13 ns

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Case Connection :

DRAIN

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 100µA

ECCN Code :

EAR99

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

8.4mOhm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE