IRF1018ESPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Peak Reflow Temperature (Cel) :

260

Recovery Time :

39 ns

Number of Pins :

3

Case Connection :

DRAIN

Power Dissipation :

110W

Vgs(th) (Max) @ Id :

4V @ 100µA

Height :

4.826mm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Continuous Drain Current (ID) :

79A

JESD-609 Code :

e3

Threshold Voltage :

4V

Terminal Form :

Gull wing

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Resistance :

8.4mOhm

Avalanche Energy Rating (Eas) :

88 mJ

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2008

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

79A Tc

REACH SVHC :

No SVHC

Factory Lead Time :

52 Weeks

JESD-30 Code :

R-PSSO-G2

Rise Time :

35ns

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Width :

9.65mm

ECCN Code :

EAR99

Radiation Hardening :

No

Element Configuration :

Single

Fall Time (Typ) :

46 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Mount :

Surface Mount

Power Dissipation-Max :

110W Tc

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Vgs (Max) :

±20V