IRF1018EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

8.4mOhm

Turn On Delay Time :

13 ns

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Pins :

3

Power Dissipation :

110W

Recovery Time :

39 ns

Factory Lead Time :

12 Weeks

Rise Time :

35ns

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Width :

4.826mm

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 100µA

Case Connection :

DRAIN

Lead Free :

Lead Free

Fall Time (Typ) :

46 ns

Contact Plating :

Tin

Number of Elements :

1

Avalanche Energy Rating (Eas) :

88 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Length :

10.668mm

Turn-Off Delay Time :

55 ns

Published :

2002

Mount :

Through Hole

Continuous Drain Current (ID) :

79A

Vgs (Max) :

±20V

Height :

9.017mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Mounting Type :

Through Hole

Power Dissipation-Max :

110W Tc

Threshold Voltage :

4V

Packaging :

Tube

FET Type :

N-Channel