IRF1010ZSTRRPBF
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- Mfr.Part #
- IRF1010ZSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 45,752
- In Stock ：
- 45,752
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 18 ns
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Published :
- 1997
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Rise Time :
- 150ns
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 75A, 10V
- Terminal Form :
- Gull wing
- Length :
- 10.668mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Height :
- 4.826mm
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 140W Tc
- Vgs (Max) :
- ±20V
- Width :
- 9.65mm
- Turn-Off Delay Time :
- 36 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 92 ns
- Resistance :
- 7.5mOhm
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Continuous Drain Current (ID) :
- 75A
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Power Dissipation :
- 140W
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Datasheets
- IRF1010ZSTRRPBF
N-Channel Tape & Reel (TR) 7.5m Ω @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010ZSTRRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2840pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1010ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRRPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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