IRF1010ZSTRLPBF
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- Mfr.Part #
- IRF1010ZSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 13,360
- In Stock ：
- 13,360
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Power Dissipation :
- 140W
- Drain to Source Breakdown Voltage :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 140W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Length :
- 10.668mm
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 75A, 10V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Mount :
- Surface Mount
- Height :
- 4.826mm
- Width :
- 9.65mm
- Continuous Drain Current (ID) :
- 75A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Rise Time :
- 150ns
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Fall Time (Typ) :
- 92 ns
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 36 ns
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 18 ns
- Published :
- 2001
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Datasheets
- IRF1010ZSTRLPBF
N-Channel Tape & Reel (TR) 7.5m Ω @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010ZSTRLPBF Overview
A device's maximum input capacitance is 2840pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF1010ZSTRLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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