IRF1010ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Length :

10.54mm

Voltage - Rated DC :

55V

Number of Pins :

3

Mounting Type :

Through Hole

Resistance :

7.5mOhm

Factory Lead Time :

12 Weeks

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Fall Time (Typ) :

92 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Case Connection :

DRAIN

Power Dissipation :

140W

Turn-Off Delay Time :

36 ns

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

55V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 75A, 10V

Rise Time :

150ns

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Nominal Vgs :

4 V

Published :

2003

Width :

4.69mm

Lead Free :

Lead Free

Element Configuration :

Single

Current Rating :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Power Dissipation-Max :

140W Tc

Continuous Drain Current (ID) :

75A

Recovery Time :

33 ns

Height :

8.77mm

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

18 ns

Number of Terminations :

3