IRF1010ZL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.0075Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Mounting Type :

Through Hole

JESD-609 Code :

e3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

360A

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

140W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

94A

Terminal Finish :

MATTE TIN OVER NICKEL

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Avalanche Energy Rating (Eas) :

130 mJ

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Case Connection :

DRAIN

Published :

2003

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Series :

HEXFET®

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Number of Elements :

1