IRF1010NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Surface Mount :

yes

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.011Ohm

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

290A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

11m Ω @ 43A, 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Power Dissipation-Max :

180W Tc

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

250 mJ

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Published :

2002

Qualification Status :

Not Qualified

Series :

HEXFET®

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V