IRF1010NSTRLPBF
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- Mfr.Part #
- IRF1010NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 85A D2PAK
- Stock
- 1,409
- In Stock ：
- 1,409
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Turn-Off Delay Time :
- 39 ns
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 180W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 4.826mm
- Pulsed Drain Current-Max (IDM) :
- 290A
- Rise Time :
- 76ns
- JEDEC-95 Code :
- TO-252
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Nominal Vgs :
- 4 V
- Drain Current-Max (Abs) (ID) :
- 75A
- FET Type :
- N-Channel
- Threshold Voltage :
- 4V
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Width :
- 9.65mm
- Lead Free :
- Contains Lead, Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.668mm
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Recovery Time :
- 100 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3210pF @ 25V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Current Rating :
- 85A
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 180W Tc
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 48 ns
- ECCN Code :
- EAR99
- Published :
- 2002
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 43A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 85A
- Termination :
- SMD/SMT
- Voltage - Rated DC :
- 55V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 55V
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Turn On Delay Time :
- 13 ns
- Dual Supply Voltage :
- 55V
- Datasheets
- IRF1010NSTRLPBF
N-Channel Tape & Reel (TR) 11m Ω @ 43A, 10V ±20V 3210pF @ 25V 120nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010NSTRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 3210pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 85A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 39 ns.Its maximum pulsed drain current is 290A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF1010NSTRLPBF Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V
IRF1010NSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1010NSTRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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