IRF1010NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.82mm

Continuous Drain Current (ID) :

85A

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Number of Channels :

1

Number of Elements :

1

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

290A

Number of Pins :

3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

250 mJ

Number of Terminations :

3

Power Dissipation :

180W

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

11m Ω @ 43A, 10V

Lead Pitch :

2.54mm

Published :

2001

Power Dissipation-Max :

180W Tc

Packaging :

Tube

Fall Time (Typ) :

48 ns

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Height :

19.8mm

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

85A

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Voltage - Rated DC :

55V

Turn On Delay Time :

13 ns

Radiation Hardening :

No

Rise Time :

76ns

Threshold Voltage :

4V

Turn-Off Delay Time :

39 ns

Resistance :

11mOhm

JESD-609 Code :

e3

Dual Supply Voltage :

55V

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

175°C

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Contact Plating :

Tin

Termination :

Through Hole

Vgs (Max) :

±20V

Length :

10.6426mm

Drain to Source Breakdown Voltage :

55V

Recovery Time :

100 ns

Mounting Type :

Through Hole

Series :

HEXFET®