IPZ65R045C7XKSA1
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- Mfr.Part #
- IPZ65R045C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 46A TO247
- Stock
- 2,242
- In Stock ：
- 2,242
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 18 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 16.13mm
- Max Dual Supply Voltage :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 227W Tc
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Package / Case :
- TO-247-4
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 4
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Packaging :
- Tube
- Height :
- 21.1mm
- Rise Time :
- 14ns
- RoHS Status :
- ROHS3 Compliant
- Series :
- CoolMOS™ C7
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 82 ns
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Drain to Source Breakdown Voltage :
- 650V
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1.25mA
- Width :
- 5.21mm
- Fall Time (Typ) :
- 7 ns
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 24.9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 400V
- Continuous Drain Current (ID) :
- 46A
- Turn On Delay Time :
- 20 ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 227W
- Datasheets
- IPZ65R045C7XKSA1
N-Channel Tube 45m Ω @ 24.9A, 10V ±20V 4340pF @ 400V 93nC @ 10V TO-247-4
IPZ65R045C7XKSA1 Overview
The maximum input capacitance of this device is 4340pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 46A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPZ65R045C7XKSA1 Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 82 ns
IPZ65R045C7XKSA1 Applications
There are a lot of Infineon Technologies
IPZ65R045C7XKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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