IPZ60R099C7XKSA1
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- Mfr.Part #
- IPZ60R099C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247-4
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 9.7A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.099Ohm
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-4
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 22A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 110W Tc
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 490μA
- JESD-30 Code :
- R-PSFM-T4
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1819pF @ 400V
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 83A
- Operating Mode :
- ENHANCEMENT MODE
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Series :
- CoolMOS™ C7
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 600V
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IPZ60R099C7XKSA1
N-Channel Tube 99m Ω @ 9.7A, 10V ±20V 1819pF @ 400V 42nC @ 10V TO-247-4
IPZ60R099C7XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 97 mJ.The maximum input capacitance of this device is 1819pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83A.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPZ60R099C7XKSA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 83A.
IPZ60R099C7XKSA1 Applications
There are a lot of Infineon Technologies
IPZ60R099C7XKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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