IPZ60R070P6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Terminal Position :

Single

Lead Free :

Lead Free

Power Dissipation-Max :

391W Tc

Continuous Drain Current (ID) :

53.5A

Max Dual Supply Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

53.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ P6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 100V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T4

Packaging :

Tube

Drain-source On Resistance-Max :

0.07Ohm

Avalanche Energy Rating (Eas) :

1136 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 1.72mA

Pbfree Code :

yes

Vgs (Max) :

±20V

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Number of Elements :

1

Package / Case :

TO-247-4

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

70m Ω @ 20.6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

156A