IPZ60R099P6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

109A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 1.21mA

Current - Continuous Drain (Id) @ 25°C :

37.9A Tc

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

JESD-30 Code :

R-PSFM-T4

Avalanche Energy Rating (Eas) :

796 mJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Published :

2008

Mount :

Through Hole

Vgs (Max) :

±20V

FET Type :

N-Channel

Power Dissipation-Max :

278W Tc

Package / Case :

TO-247-4

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Rds On (Max) @ Id, Vgs :

99m Ω @ 14.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.099Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3330pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Series :

CoolMOS™ P6

Max Dual Supply Voltage :

600V

Continuous Drain Current (ID) :

37.9A

Packaging :

Tube

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE