IPZ65R095C7XKSA1
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- Mfr.Part #
- IPZ65R095C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A TO247-4
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 4V @ 590μA
- Max Dual Supply Voltage :
- 650V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-247-4
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Power Dissipation :
- 128W
- Rds On Max :
- 95 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Number of Pins :
- 4
- Packaging :
- Tube
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Rise Time :
- 8ns
- Input Capacitance :
- 2.14nF
- Continuous Drain Current (ID) :
- 24A
- Fall Time (Typ) :
- 7 ns
- Max Operating Temperature :
- 150°C
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 84mOhm
- Power Dissipation-Max :
- 128W Tc
- Supplier Device Package :
- PG-TO247-4
- Turn-Off Delay Time :
- 60 ns
- Series :
- CoolMOS™ C7
- Input Capacitance (Ciss) (Max) @ Vds :
- 2140pF @ 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 95mOhm @ 11.8A, 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- IPZ65R095C7XKSA1
N-Channel Tube 95mOhm @ 11.8A, 10V ±20V 2140pF @ 400V 45nC @ 10V 650V TO-247-4
IPZ65R095C7XKSA1 Overview
A device's maximum input capacitance is 2140pF @ 400V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 84mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Powered by 650V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPZ65R095C7XKSA1 Features
a continuous drain current (ID) of 24A
the turn-off delay time is 60 ns
single MOSFETs transistor is 84mOhm
a 650V drain to source voltage (Vdss)
IPZ65R095C7XKSA1 Applications
There are a lot of Infineon Technologies
IPZ65R095C7XKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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