IPW90R800C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Pins :

3

JEDEC-95 Code :

TO-247AD

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

6.9A

Transistor Element Material :

SILICON

Series :

CoolMOS™

ECCN Code :

EAR99

Rise Time :

20ns

Published :

2008

Vgs (Max) :

±20V

Power Dissipation-Max :

104W Tc

FET Type :

N-Channel

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.1A, 10V

Turn On Delay Time :

70 ns

Drain-source On Resistance-Max :

0.8Ohm

Turn-Off Delay Time :

400 ns

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

JESD-609 Code :

e3

Max Dual Supply Voltage :

900V

Package / Case :

TO-247-3

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6.9A Tc

Power Dissipation :

104W

Fall Time (Typ) :

32 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 460μA

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3