IPW90R1K2C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Power Dissipation :

83W

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Qualification Status :

Not Qualified

Packaging :

Tube

Number of Terminations :

3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Fall Time (Typ) :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Rise Time :

20ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Package / Case :

TO-247-3

Turn-Off Delay Time :

400 ns

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

6 Weeks

Published :

2008

Series :

CoolMOS™

Number of Pins :

3

Turn On Delay Time :

70 ns

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Avalanche Energy Rating (Eas) :

68 mJ

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Pbfree Code :

yes

Continuous Drain Current (ID) :

5.1A

Max Dual Supply Voltage :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

83W Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED