IPW90R1K0C3FKSA1
- Mfr.Part #
- IPW90R1K0C3FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IPW90R1 - 900V COOLMOS N-CHANNEL
- Stock
- 99
- In Stock :
- 99
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 100V
- Turn-Off Delay Time :
- 400 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3.5V @ 370µA
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 3.3A, 10V
- FET Type :
- N-Channel
- Power Dissipation :
- 89W
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 70 ns
- Published :
- 2008
- Power Dissipation-Max :
- 89W Tc
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 1Ohm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 12A
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Series :
- CoolMOS™
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Max Dual Supply Voltage :
- 900V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 35 ns
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Tc
- JEDEC-95 Code :
- TO-247AD
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 20ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 5.7A
- Transistor Application :
- SWITCHING
- Datasheets
- IPW90R1K0C3FKSA1

N-Channel Tube 1 Ω @ 3.3A, 10V ±20V 850pF @ 100V 34nC @ 10V TO-247-3
IPW90R1K0C3FKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 97 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 850pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 400 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 12A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 900V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPW90R1K0C3FKSA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 5.7A
the turn-off delay time is 400 ns
based on its rated peak drain current 12A.
IPW90R1K0C3FKSA1 Applications
There are a lot of Infineon Technologies
IPW90R1K0C3FKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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