IPW90R1K0C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

5.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Position :

Single

Published :

2008

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

400 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

20ns

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Turn On Delay Time :

70 ns

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

900V

Pulsed Drain Current-Max (IDM) :

12A

Avalanche Energy Rating (Eas) :

97 mJ

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 100V

Drain-source On Resistance-Max :

1Ohm

Transistor Element Material :

SILICON

Power Dissipation :

89W

Series :

CoolMOS™

Number of Pins :

3

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

89W Tc

Mount :

Through Hole

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Number of Terminations :

3

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

JESD-609 Code :

e3