IPW90R1K2C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Turn On Delay Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Power Dissipation :

83W

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Series :

CoolMOS™

Fall Time (Typ) :

40 ns

JESD-609 Code :

e3

Max Dual Supply Voltage :

900V

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Rise Time :

20ns

Avalanche Energy Rating (Eas) :

68 mJ

Mounting Type :

Through Hole

Packaging :

Tube

FET Type :

N-Channel

Qualification Status :

Not Qualified

Pin Count :

3

Published :

2008

Continuous Drain Current (ID) :

5.1A

Turn-Off Delay Time :

400 ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED