IPW90R120C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

36A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

417W Tc

Vgs(th) (Max) @ Id :

3.5V @ 2.9mA

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Pbfree Code :

yes

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.12Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

1940 mJ

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

DS Breakdown Voltage-Min :

900V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

96A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 100V

JESD-609 Code :

e3

Published :

2008

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

900V

Number of Elements :

1

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™

JESD-30 Code :

R-PSFM-T3