IPW90R120C3FKSA1

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Mfr.Part #
IPW90R120C3FKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 36A TO247-3 COO
Stock
12,691
In Stock :
12,691

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2008
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
36A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 100V
Pbfree Code :
yes
Package / Case :
TO-247-3
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin (Sn)
Drain to Source Voltage (Vdss) :
900V
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.12Ohm
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
96A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
120m Ω @ 26A, 10V
FET Type :
N-Channel
Power Dissipation-Max :
417W Tc
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
900V
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
3.5V @ 2.9mA
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Series :
CoolMOS™
Avalanche Energy Rating (Eas) :
1940 mJ
Qualification Status :
Not Qualified
Datasheets
IPW90R120C3FKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPW90R120C3FKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IPW90R120C3FKSA1 pinout, IPW90R120C3FKSA1 datasheet PDF, IPW90R120C3FKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPW90R120C3FKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPW90R120C3FKSA1


N-Channel Tube 120m Ω @ 26A, 10V ±20V 6800pF @ 100V 270nC @ 10V 900V TO-247-3

IPW90R120C3FKSA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1940 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6800pF @ 100V.There is no drain current on this device since the maximum continuous current it can conduct is 36A.There is a peak drain current of 96A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 900V, it should remain above the 900V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IPW90R120C3FKSA1 Features


the avalanche energy rating (Eas) is 1940 mJ
based on its rated peak drain current 96A.
a 900V drain to source voltage (Vdss)


IPW90R120C3FKSA1 Applications


There are a lot of Infineon Technologies
IPW90R120C3FKSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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