IPW90R120C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

36A

Terminal Position :

Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

Vgs (Max) :

±20V

Published :

2008

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

900V

Package / Case :

TO-247-3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.12Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 100V

Packaging :

Tube

Pin Count :

3

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Power Dissipation-Max :

417W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

900V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

96A

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

3.5V @ 2.9mA

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1940 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

3