IPW50R350CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

80 ns

Package Quantity :

240

Drain to Source Voltage (Vdss) :

500 V

Package :

Bulk

Continuous Drain Current Id :

10

Drain to Source Breakdown Voltage :

500 V

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Rise Time :

14 ns

On-State Resistance :

350 mΩ

Product Status :

Active

Max Power Dissipation :

89 W

Input Capacitance (Ciss) (Max) @ Vds :

1020 pF @ 100 V

Turn-On Delay Time :

35 ns

Number of Pins :

3

Series :

CoolMOS™

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Drain to Source Resistance :

350 mΩ

FET Feature :

-

Gate to Source Voltage (Vgs) :

20 V

Rds On (Max) @ Id, Vgs :

350mOhm @ 5.6A, 10V

Channel Type :

N

Technology :

MOSFET (Metal Oxide)

Termination :

Through Hole

RoHS :

Compliant

Element Configuration :

Single

FET Type :

N-Channel

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Supplier Device Package :

PG-TO247-3-21

Package / Case :

TO-247-3

Min Operating Temperature :

-55 °C

Rds On Max :

350 mΩ

Drive Voltage (Max Rds On, Min Rds On) :

10V

Nominal Vgs :

3 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Continuous Drain Current (ID) :

10 A

Power Dissipation :

89

Power Dissipation (Max) :

89W (Tc)

Dual Supply Voltage :

550 V

REACH SVHC :

No SVHC

Input Capacitance :

1.02 nF