IPW50R299CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

80 ns

Package :

Bulk

JESD-30 Code :

R-PSFM-T3

On-State Resistance :

299 mΩ

RoHS :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Pulsed Drain Current-Max (IDM) :

26 A

Drain to Source Breakdown Voltage :

500 V

Power Dissipation (Max) :

104W (Tc)

Termination :

Through Hole

Drain to Source Voltage (Vdss) :

500 V

Min Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

20 V

Channel Type :

N

Drain-source On Resistance-Max :

0.299 Ω

Pin Count :

3

Width :

5.16 mm

FET Type :

N-Channel

Max Power Dissipation :

104 W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

299 mΩ

Power Dissipation :

104

Mounting Type :

Through Hole

Max Operating Temperature :

150 °C

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Rds On Max :

299 mΩ

Dual Supply Voltage :

550 V

Rds On (Max) @ Id, Vgs :

299mOhm @ 6.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Transistor Element Material :

SILICON

Height :

21.1 mm

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

104 W

Continuous Drain Current (ID) :

12 A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Pbfree Code :

yes

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Input Capacitance (Ciss) (Max) @ Vds :

1190 pF @ 100 V

Qualification Status :

Not Qualified

Terminal Position :

Single

Nominal Vgs :

3 V

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Manufacturer :

Infineon Technologies AG

Supplier Device Package :

PG-TO247-3-21

Number of Elements :

1

Element Configuration :

Single

Number of Terminals :

3

Turn-On Delay Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

500 V

Drain Current-Max (Abs) (ID) :

12 A

REACH SVHC :

No SVHC

Technology :

MOSFET (Metal Oxide)

Package Quantity :

240

Reach Compliance Code :

Compliant

Subcategory :

FET General Purpose Power

Length :

16.03 mm

Rise Time :

14 ns

FET Feature :

-

Factory Lead Time :

1 Week

Package Shape :

RECTANGULAR

Surface Mount :

No

Continuous Drain Current Id :

12

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-247AD

Number of Pins :

3

Avalanche Energy Rating (Eas) :

289 mJ

Input Capacitance :

1.19 nF

Series :

CoolMOS™

Terminal Form :

THROUGH-HOLE