IPW50R190CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

127W

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 6.2A, 13V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

13V

Number of Terminations :

3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1137pF @ 100V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

3.5V @ 510μA

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

9.5 ns

Max Dual Supply Voltage :

500V

Number of Pins :

3

Rise Time :

8.5ns

Turn-Off Delay Time :

54 ns

RoHS Status :

RoHS Compliant

Series :

CoolMOS™

Power Dissipation-Max :

127W Tc

Fall Time (Typ) :

7.5 ns

Element Configuration :

Single

Packaging :

Tube

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

18.5A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

47.2nC @ 10V

Mount :

Through Hole

Radiation Hardening :

No

FET Feature :

Super Junction

Published :

2000

Pin Count :

3