IPW50R190CE
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- Mfr.Part #
- IPW50R190CE
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 38,414
- In Stock ：
- 38,414
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 127W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 47.2nC @ 10V
- Rise Time :
- 8.5ns
- Factory Lead Time :
- 6 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1137pF @ 100V
- Max Dual Supply Voltage :
- 500V
- Number of Elements :
- 1
- Packaging :
- Tube
- Number of Pins :
- 3
- Fall Time (Typ) :
- 7.5 ns
- Series :
- CoolMOS™
- Turn On Delay Time :
- 9.5 ns
- Published :
- 2000
- FET Feature :
- Super Junction
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 127W
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 18.5A
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 6.2A, 13V
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.5V @ 510μA
- Turn-Off Delay Time :
- 54 ns
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Datasheets
- IPW50R190CE
N-Channel Tube 190m Ω @ 6.2A, 13V ±20V 1137pF @ 100V 47.2nC @ 10V TO-247-3
IPW50R190CEFKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1137pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 500V, it supports dual voltages up to the maximum.Using drive voltage (13V), this device contributes to a reduction in overall power consumption.
IPW50R190CEFKSA1 Features
a continuous drain current (ID) of 18.5A
the turn-off delay time is 54 ns
IPW50R190CEFKSA1 Applications
There are a lot of Infineon Technologies
IPW50R190CEFKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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