IPW50R280CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

40 ns

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.2A, 13V

Pulsed Drain Current-Max (IDM) :

42.9A

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

92W Tc

Vgs(th) (Max) @ Id :

3.5V @ 350μA

Factory Lead Time :

52 Weeks

Lead Free :

Lead Free

Rise Time :

6.4ns

Transistor Application :

SWITCHING

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs (Max) :

±20V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Max Dual Supply Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

13V

Gate Charge (Qg) (Max) @ Vgs :

32.6nC @ 10V

Mounting Type :

Through Hole

FET Feature :

Super Junction

Package / Case :

TO-247-3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

7.6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

773pF @ 100V

Series :

CoolMOS™

Continuous Drain Current (ID) :

13A

Drain-source On Resistance-Max :

0.28Ohm

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Turn On Delay Time :

8 ns

Pin Count :

3