IPW50R280CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

Max Dual Supply Voltage :

500V

Continuous Drain Current (ID) :

13A

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

92W Tc

Turn On Delay Time :

8 ns

Mount :

Through Hole

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

6.4ns

Turn-Off Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

773pF @ 100V

Pulsed Drain Current-Max (IDM) :

42.9A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.28Ohm

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 350μA

Package / Case :

TO-247-3

Fall Time (Typ) :

7.6 ns

Vgs (Max) :

±20V

FET Feature :

Super Junction

FET Type :

N-Channel

Lead Free :

Lead Free

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

32.6nC @ 10V

RoHS Status :

RoHS Compliant

Pin Count :

3

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.2A, 13V

Factory Lead Time :

52 Weeks

Number of Pins :

3

Published :

2008